Determining memory page status

ABSTRACT

The present disclosure includes methods, devices, modules, and systems for operating semiconductor memory. One method embodiment includes determining a status of a page of memory cells without using input/output (I/O) circuitry, and outputting the status through the I/O circuitry.

PRIORITY INFORMATION

This application claims priority to a China Patent Application SerialNo. 200810211465.6, filed Sep. 26, 2008, and a Taiwan Patent ApplicationSerial No. 097137518, filed Sep. 30, 2008, the specifications of whichare incorporated by reference herein.

Technical Field

The present disclosure relates generally to semiconductor memorydevices, methods, and systems, and more particularly, to operatingsemiconductor memory.

Background

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory, including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), and flash memory, among others.

Flash memory devices may be utilized as volatile and non-volatile memoryfor a wide range of electronic applications. Flash memory devicestypically use a one-transistor memory cell that allows for high memorydensities, high reliability, and low power consumption.

Uses for flash memory include memory for sold state drives (SSDs),personal computers, personal digital assistants (PDAs), digital cameras,cellular telephones, portable music players, e.g., MP3 players, andmovie players. Program code and system data, such as a basicinput/output system (BIOS), are typically stored in flash memorydevices. This information may be used in personal computer systems,among others. Some uses of flash memory may include multiple reads ofdata programmed to a flash memory device without erasing the data.

Two common types of flash memory array architectures are the “NAND” and“NOR” architectures, so called for the logical form in which the basicmemory cell configuration of each is arranged. A NAND array architecturearranges its array of floating gate memory cells in a matrix such thatthe gates of each floating gate memory cell in a “row” of the array arecoupled to an access line, which is commonly referred to in the art as a“word line”. However each memory cell is not directly coupled to a dataline (which is commonly referred to as a digit line, e.g., a bit line,in the art) by its drain. Instead, the memory cells of the array arecoupled together in series, source to drain, between a source line and asense line, where the memory cells commonly coupled to a particularsense line are referred to as a “column”.

Memory cells in a NAND array architecture may be programmed to a desiredstate. That is, electric charge can be placed on or removed from thefloating gate of a memory cell to put the cell into a number ofprogrammed states. For example, a single level cell (SLC) can representtwo states, e.g., 1 or 0. Flash memory cells can also store more thantwo states, e.g., 1111, 0111, 0011, 1011, 1001, 0001, 0101, 1101, 1100,0100, 0000, 1000, 1010, 0010, 0110, and 1110. Such cells may be referredto as multi state memory cells, multidigit cells, or multilevel cells(MLCs). MLCs may allow the manufacture of higher density memorieswithout increasing the number of memory cells since each cell canrepresent more than one digit, e.g., more than one bit. MLCs may havemore than two programmed states, e.g., a cell capable of representingfour digits can have sixteen programmed states. For some MLCs, one ofthe sixteen programmed states may be an erased state. For these MLCs,the lowermost program state is not programmed above the erased state,that is, if the cell is programmed to the lowermost state, it remains inthe erased state rather than having a charge applied to the cell duringa programming operation. The other fifteen programmed states may bereferred to as “non-erased” states.

A page of memory cells may have a status, e.g., erased and/ornon-erased, associated therewith. The status of a page of memory cellsmay be based on, e.g., depend on, the state of the memory cells in thepage. One operation to determine the status of a page of memory cellsmay include outputting a sensed state(s) of the memory cells in the pagefrom a register coupled to the page to input/output (I/O) circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic of a portion of a non-volatile memory array inaccordance with one or more embodiments of the present disclosure.

FIG. 2A illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure.

FIG. 2B illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure.

FIG. 3 illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure.

FIG. 4 illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure.

FIG. 5A illustrates logic circuitry for determining a status of a pageof memory cells in accordance with one or more embodiments of thepresent disclosure.

FIG. 5B illustrates logic circuitry for determining a status of a pageof memory cells in accordance with one or more embodiments of thepresent disclosure.

FIG. 6 illustrates a timing diagram of various signals during operationof a memory device in accordance with one or more embodiments of thepresent disclosure.

FIG. 7 is a functional block diagram of an electronic memory systemhaving at least one memory device operated in accordance with one ormore embodiments of the present disclosure.

FIG. 8 is a functional block diagram of a memory module having at leastone memory device operated in accordance with one or more embodiments ofthe present disclosure.

DETAILED DESCRIPTION

The present disclosure includes methods, devices, modules and systemsfor operating semiconductor memory. One method embodiment includesdetermining a status of a pace of memory cells without usinginput/output (I/O) circuitry, and outputting the status through the I/Ocircuitry.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, the designators “N” and “M,”particularly with respect to reference numerals in the drawings,indicate that a number of the particular feature so designated can beincluded with one or more embodiments of the present disclosure.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 10 may referenceelement “10” in FIG. 1, and a similar element may be referenced as 210in FIG. 2. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustrate theembodiments of the present invention, and should not be taken in alimiting sense.

FIG. 1 is a schematic of a portion of a non-volatile memory array 100 inaccordance with one or more embodiments of the present disclosure. Theembodiment of FIG. 1 illustrates a NAND architecture non-volatilememory. However, embodiments described herein are not limited to thisexample. As shown in FIG. 1, the memory array 100 includes access lines,e.g., word lines 105-1, . . . , 105-N and intersecting data lines, e.g.,local bit lines 107-1, 107-2, 107-3, . . . , 107-M. For ease ofaddressing in the digital environment, the number of word lines 105-1, .. . , 105-N and the number of local bit lines 107-1, 107-2, 107-3, . . ., 107-M can be some power of two, e.g., 256 word lines by 4,096 bitlines.

Memory array 100 includes NAND strings 109-1, 109-2, 109-3, . . . ,109-M. Each NAND string includes non-volatile memory cells 111-1, . . ., 111-N, each associated with an intersection of a word line 105-1, . .. , 105-N and a local bit line 107-1, 107-2, 107-3, . . . , 107-M. Thenon-volatile memory cells 111-1, . . . , 111-N of each NAND string109-1, 109-2, 109-3, . . . , 109-M are connected in series source todrain between a source select gate (SGS), e.g., a field-effecttransistor (FET) 113, and a drain select gate (SGD), e.g., FET 119.Source select gate 113 is located at the intersection of a local bitline 107-1 and a source select line 117 while drain select gate 119 islocated at the intersection of a local bit line 107-1 and a drain selectline 115.

As shown in the embodiment illustrated in FIG. 1, a source of sourceselect gate 113 is connected to a common source line 123. The drain ofsource select gate 113 is connected to the source of the memory cell111-1 of the corresponding NAND string 109-1. The drain of drain selectgate 119 is connected to the local bit line 107-1 for the correspondingNAND string 109-1 at drain contact 121-1. The source of drain selectgate 119 is connected to the drain of the last memory cell 111-N, e.g.,a floating-gate transistor, of the corresponding NAND string 109-1.

In one or more embodiments, construction of non-volatile memory cells,111-1, . . . , 111-N, includes a source, a drain, a floating gate orother charge storage node, and a control gate. Non-volatile memorycells, 111-1, . . . , 111-N, have their control gates coupled to a wordline, 105-1, . . . , 105-N respectively. A “column” of the non-volatilememory cells, 111-1, . . . , 111-N, make up the NAND strings, e.g.,109-1, 109-2, 109-3, . . . , 109-M, and are coupled to a given local bitline, e.g., 107-1, 107-2. 107-3, . . . , 107-M respectively. A “row” ofthe non-volatile memory cells are those memory cells commonly coupled toa given word line, e.g., 105-1, . . . , 105-N. The use of the terms“column” and “row” is not meant to imply a particular linear, e.g.,vertical and/or horizontal, orientation of the non-volatile memorycells. A NOR array architecture would be similarly laid out, except thatthe string of memory cells would be coupled in parallel between theselect gates.

As one of ordinary skill in the art will appreciate, subsets of cellscoupled to a selected word line, e.g., 105-1, . . . , 105-N, can beprogrammed and/or sensed, e.g., read, together as a group. A programmingoperation, e.g., a write operation, can include applying a number ofprogram pulses, e.g., 16V-20V, to a selected word line in order toincrease the threshold voltage (Vt) of selected cells to a desiredprogram voltage level corresponding to a desired program state.

A sensing operation, such as a read or program verify operation, caninclude sensing a voltage and/or current change of a bit line coupled toa selected cell in order to determine the state of the selected cell.The sensing operation can involve biasing a bit line, e.g., bit line107-1, associated with a selected memory cell at a voltage above a biasvoltage for a source line, e.g., source line 123, associated with theselected memory cell. A sensing operation could alternatively includeprecharging the bit line 107-1 followed with discharge when a selectedcell begins to conduct, and sensing the discharge.

Sensing the state of a selected cell can include applying one or moresensing voltages, e.g., read voltages “Vread” to a selected word line,while biasing the unselected cells of the string at one or more voltagessufficient to place the unselected cells in a conducting stateindependent of the threshold voltage of the unselected cells, e.g., passvoltages “Vpass”. The bit line corresponding to the selected cell beingread and/or verified can be sensed to determine whether or not theselected cell conducts in response to the particular sensing voltageapplied to the selected word line. For example, the state of a selectedcell can be determined by the word line voltage at which the bit linecurrent reaches a particular reference current associated with aparticular state.

As one of ordinary skill in the art will appreciate, in a sensingoperation performed on a selected memory cell in a NAND string, theunselected memory cells of the string are biased so as to be in aconducting state. In such a sensing operation, the data stored in theselected cell can be based on the current and/or voltage sensed on thebit line corresponding to the string. For instance, data stored in theselected cell can be based on whether the bit line current changes by aparticular amount or reaches a particular level in a given lime period.

When the selected cell is in a conductive state, current flows betweenthe source line contact at one end of the string and a bit line contactat the other end of the string. As such, the current associated withsensing the selected cell is carried through each of the other cells inthe string, the diffused regions between cell stacks, and the selecttransistors.

FIG. 2A illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure. Thememory architecture shown in FIG. 2A includes a number of pages, 225-0,225-1, . . . , 225-N, which together are included in Block 0, 203-0. Thememory architecture shown in FIG. 2A includes a number of blocks 203-0,203-1, . . . , 203-M, which together are included in plane 201.

Each page of memory cells 225-0, 225-1, . . . , 225-N can include anumber of memory cells, e.g., non-volatile memory cells 111-1, . . . ,111-N shown in FIG. 1. As used herein, a page of memory cells means anumber of memory cells which can store an amount of data programmable atone time. As an example, the amount of data programmable at one time canbe referred to as a page of data, and the memory cells which store thepage of data can be referred to as a page of memory cells. In one ormore embodiments, a page of memory cells can include memory cellscoupled to a particular word line, e.g., a word line such as 105-1, . .. , 105-N shown in FIG. 1. In one or more embodiments, memory cellscoupled to a particular word line can be divided into more than onepage, e.g., into an “even” page and “odd” page of data. In one or moreembodiments, a page of memory cells can include memory cells coupled tomore than one access line.

In one more embodiments, a page of memory cells can have a statusassociated therewith. The status of a page of memory cells can be basedon, e.g., depend on, the state of the memory cells in the page. Forexample, in one or more embodiments, if all the memory cells in a pageare in an erased state, the page has a status of erased. In one or moreembodiments, if at least one of the memory cells is programmed to anon-erased state, the page has a status of non-erased.

In one or more embodiments, if more than a substantial majority of thememory cells in a page are in an erased state- the page has a status oferased. In one or more embodiments, if more than a substantial minorityof the memory cells are programmed to one or more non-erased states, thepage has a status of non-erased. As used herein, the term “substantialmajority” means a number which, if met, would lead one of skill in theart to recognize that the status of the page is erased. As used herein,the term “substantial minority” means a number which, if met, would leadone of skill in the art to recognize that the status of the page isnon-erased. For example, during an erase operation of a page, a smallnumber of memory cells may not be entirely erased, e.g., may remainnon-erased, due to, for example, errors in the memory cells. However,one of skill in the art would still recognize the page as having anerased status, even though not all the memory cells in the page may bein an erased state, e.g., even though at least one of the memory cellsin the page may be in a non-erased state.

Each block of memory cells 203-0, 203-1, . . . , 203-M can include anumber of pages of memory cells, which can form a block of memory cells.For example, as shown in FIG. 2A, block 203-0 includes pages 225-0,225-1, . . . , 225-N. As used herein, a block of memory cells means anumber of memory cells which can store an amount of data erasable at onetime. For example, the amount of data erasable at one time can bereferred to as a block of data, and the memory cells which store theblock of data can be referred to as a block of memory cells.

Plane 201 can include a number of blocks, e.g., 203-0, 203-1, . . . ,203-M, on a given die. In one or more embodiments, a memory device caninclude multiple planes per die. For example, in one or moreembodiments, a die can include a plane of even numbered blocks and aplane of odd numbered blocks.

As an example, a 2 GB memory device can include 2112 bytes of data perpage, 64 pages per block, and 2048 blocks per plane. SLC devices storeone bit per cell. MLC devices can store multiple bits per cell, e.g., 2bits per cell. In a binary system, a “bit” represents one unit of data.As embodiments are not limited to a binary system, the smallest dataelement may be referred to herein as a “unit.”

The memory architecture illustrated in FIG. 2A also includes register230. As shown in FIG. 2A, plane 201 is in bidirectional communicationwith register 230. Register 230 can also receive data from input/output(I/O) circuitry, e.g., I/O circuitry 760 shown in FIG. 7, and cancommunicate data to I/O circuitry.

As one of ordinary skill in the art will appreciate, during aprogramming operation, data can be loaded from I/O circuitry intoregister 230, and can then be transferred from register 230 to memoryplane 201. This process can repeat until the programming operationcompletes. During a sensing operation, data can be transferred frommemory plane 201 to register 230.

Register 230 can communicate data with I/O circuitry through a number ofdata cycles. By way of example, a page of data, e.g., 2 kilobytes (kB)of data, can be loaded into register 230 through a number of 1 byte datacycles. Embodiments are not limited to memory devices including a 2 kBpage size. Other page sizes can be used with embodiments of the presentdisclosure, e.g., 4 kB, 8 kB, etc. As the reader will appreciate, apartial page of data can be communicated to and/or from register 230.

In one or more embodiments, register 230 can include circuitryconfigured to determine a status, e.g., erased and/or non-erased, of apage of memory cells, e.g., pages 225-0, 225-1, . . . , 225-N. In one ormore embodiments, a state, e.g., erased and/or non-erased, of one ormore of the memory cells in a page of memory cells can be sensed, thesensed state(s) can be input into the circuitry, and the circuitry candetermine the status of the page based on the inputted sensed state(s).For example, the circuitry can determine whether the status of the pageis a particular status, e.g., erased and/or non-erased, based on theinputted sensed state(s). In one or more embodiments, the circuitry caninclude logic circuitry, as will be further described herein. In one ormore embodiments, the circuitry can be configured to determine thenumber of times a particular state, e.g., erased and/or non-erased, issensed, and determine the status of the page by determining whether thenumber of times the particular state is sensed meets a thresholdsetting, e.g., a substantial majority and/or substantial minority of thenumber of memory cells in the page. For example, the circuitry caninclude a counter configured to count the number of times a particularstate is sensed, and determine the status of the page by determiningwhether the number of times the particular state is sensed meets athreshold setting.

Using circuitry located in register 230 to determine a status of one ormore pages of memory cells in accordance with one or more embodiments ofthe present disclosure can be useful in determining whether the one ormore pages have been previously programmed, e.g., whether the one ormore pages need to be programmed. For example, when a programmingoperation is initiated, determining a status of one or more pages ofmemory cells in accordance with one or more embodiments of the presentdisclosure can indicate whether the one or more pages are to beprogrammed during the programming operation, e.g., whether the one ormore pages have been previously programmed. Further, if a programmingoperation is interrupted, e.g., if the memory device is powered downabruptly during a programming operation, determining a status of one ormore pages in the memory device in accordance with one or moreembodiments of the present disclosure can indicate on which page theprogramming operation is to resume, e.g., which pages were programmedbefore the interruption and which were not.

In one or more embodiments, after the circuitry located in registry 230determines the status of a page of memory cells, the status can beoutput from the register. In one or more embodiments, the status can beoutput through I/O circuitry. For example, in one or more embodiments,the status can be output from register 230 to I/O circuitry, e.g., I/Ocircuitry 760 shown in FIG. 7.

In one or more embodiments, a status of a page of memory cells can bedetermined exclusively by the circuitry located in register 230. Forexample, in such embodiments, the I/O circuitry does not determine thestatus, rather, the I/O circuitry merely receives the determined statusfrom register 230. Additionally, in one or more embodiments, a sensedstate(s) of the memory cells in the page are not output from theregister. For example, in such embodiments, the sensed state(s) are notoutput to the I/O circuitry.

Using circuitry located in register 230 to determine a status of a pageof memory cells in accordance with one or more embodiments of thepresent disclosure can reduce the amount of time used to determine thepage status, because using circuitry located, for example, in register230 to determine the status can eliminate operations that output thesensed state(s) of the memory cells in the page from register 230, e.g.,from register 230 to the I/O circuitry, according to some previousapproaches. For example, in one or more embodiments, the amount of timeused to determine a status of a page of memory cells using circuitrylocated in register 230 in accordance with one or more embodiments ofthe present disclosure can be approximately equal to the amount of timeused to sense the state(s) of the memory cells in the page. In contrast,the amount of time used to determine the status by outputting the sensedstate(s) from register 230 to the I/O circuitry is the sum of the timeused to sense the state(s) of the memory cells in the page and the timeused to output the sensed state(s) from register 230 to the I/Ocircuitry. For example, for a page size of 4096 bytes, a sensingoperation can take approximately 20 microseconds, and approximately 25additional nanoseconds are used to output each sensed state for eachtransfer cycle, e.g., for each output of data from data register 230 tothe I/O circuitry. Hence, for a page size of 4096 bytes, the amount oftime used to determine the page status using circuitry located inregister 230 in accordance with one or more embodiments of the presentdisclosure can be approximately 20 microseconds, while the amount oftime used to determine the page status by outputting the sensed state(s)from register 230 to the I/O circuitry is approximately 122microseconds.

Further, using circuitry located in register 230 to determine a statusof a page of memory cells in accordance with one or more of embodimentsof the present disclosure can allow for the implementation of errorcorrection codes (EECs) and/or encryption algorithms that involvescrambling the data stored by the page. For example, if the I/Ocircuitry is used to determine the page status in accordance with someprevious approaches, an EEC and/or encryption algorithm that involvesdata scrambling that is applied to a page of memory cells will return anerror message if either the page status is erased or the page status innon-erased and contain erroneous data. Because an error status isreturned in both cases, it is impossible to determine whether the pagestatus is erased or whether the page status is non-erased and the pagecontains erroneous data. In contrast, if circuitry located in register230 is used to determine the page status in accordance with one or moreembodiments of the present disclosure, an error may be returned if theEEC and/or encryption algorithm is applied to a non-erased page havingerroneous data. However, an error may not be returned if the page statusis erased.

The memory architecture illustrated in FIG. 2A also includes set/resetlatch 235. As shown in FIG. 2A, register 230 is coupled to set/resetlatch 235. In one or more embodiments, set/reset latch 235 can include anumber of known values, such as known current and/or known voltagevalues corresponding to an erased, e.g., 1, and/or programmed, e.g., 0,state.

In one or more embodiments, circuitry located in register 230 can beconfigured to determine a state, e.g., erased and/or non-erased, of anumber of memory cells in a page of memory cells, e.g., page 225-0,225-1, . . . , 225-N, by comparing data in the register that isassociated with the memory cells, e.g., current and/or voltage valuescorresponding to the state of the memory cells, with the number of knownvalues in set/reset latch 235. In one or more embodiments, the dataassociated with the memory cells and/or the state(s) of the number ofmemory cells can be determined as part of a sensing operation, asdescribed herein. In one or more embodiments, the sensed state(s) can beused to determine the status of the page, as described herein.

FIG. 2B illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure.Analogous to FIG. 2A, the memory architecture shown in FIG. 2B includesa number of pages, e.g., 225-0, 225-1, . . . , 225-N, and blocks, e.g.,203-0, 203-1, . . . , 203-M in plane 201. However, unlike FIG. 2A, thememory architecture shown in FIG. 2B includes two registers, dataregister 231 and cache register 233. Data register 231 can operate in ananalogous fashion to register 230 in FIG. 2A in that it can transferdata to and receive data from memory plane 201. Cache register 233 canoperate in an analogous fashion to register 230 in FIG. 2A in that itcan receive data from and communicate data to I/O circuitry through anumber of data cycles.

During non-cache operations, the data register 231 and cache register233 can operate together as a single register, e.g., as register 230 inFIG. 2A. During cache operations, data register 231 and cache register233 can operate separately in a pipelined process. For example, during aprogram operation, data from I/O circuitry, e.g., from a host (forinstance, from a processor associated with the host), can be loaded intothe cache register, e.g., through a number of serially clocked datacycles, and then transferred from the cache register to the dataregister. After data is transferred to the data register, the contentsof the data register can be programmed into memory plane 201. In anexample sense operation, data can be sensed from memory plane 201 andloaded into data register 233. After data is loaded into data register231, it can be transferred to cache register 233. After data has beenloaded into cache register 233, it can be transferred out to I/Ocircuitry.

Using a cache register for sensing operations can allow pipelining anext sequential access from the array while outputtingpreviously-accessed data. Such a double-buffered technique can allowread access time, e.g., t_(R) shown in FIG. 6, to he “hidden.” Data canbe first transferred from a memory array to the data register. If thecache register is available, e.g., not busy, the data can be moved fromthe data register to the cache register. Once the data is transferred tothe cache register, the data register is available and can start to loadthe next sequential page from the memory array.

Using a cache register for programming operations can provide aperformance improvement versus non-cached programming operations. Such adouble-buffered technique can allow a controller to input data directlyto the cache register and use the data register as a holding register tosupply data for programming to the array. Such a method can free thecache register so that a next page operation can be loaded in parallel.In some applications, the programming time can be completely “hidden.”The data register can maintain data through the programming cycle. Sucha method can free up the cache register so that it can start receivingthe next page of data from the controller.

In one or more embodiments, data register 231 and/or cache register 233can include circuitry analogous to the circuitry that can be included inregister 230 in FIG. 2A, e.g., circuitry configured to determine astatus of a page of memory cells, as described herein. In one or moreembodiments, cache register 233 can output the determined status, e.g.,output the determined status to I/O circuitry, e.g., I/O circuitry 760shown in FIG. 7. In one or more embodiments, the status can bedetermined exclusively by the circuitry in data register 231 and/orcache register 233, which can reduce the amount of time used todetermine page status and/or allow for the implementation of errorcorrection codes and/or encryption algorithms which involve datascrambling, as described herein.

The memory architecture shown in FIG. 2B includes set/reset latch 235,which is analogous to set/reset latch 235 shown in FIG. 2A. As shown inFIG. 2B, set/reset latch 235 is coupled to cache register 233. In one ormore embodiments, circuitry located in data register 231 and/or cacheregister 233 can be configured to determine a state of a number ofmemory cells in a page of memory cells by comparing data in the registerthat is associated with the memory cells with the known values inset/reset latch 235, as described herein.

FIG. 3 illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure. Thememory architecture shown in FIG. 3 includes two memory dice 327-1 and327-2 with two planes each, 301-1, 301-2, 301-3, and 301-4. Each planeis in bidirectional communication with a data register 331-1, 331-2,331-3, and 331-4 respectively. Each data register is in bidirectionalcommunication with a cache register 333-1, 333-2, 333-3, and 333-4respectively. Each cache register is coupled to a set/reset latch 335-1,335-2, 335-3, and 335-4, respectively. Each register and set/reset latchcan function substantially as described herein.

In the embodiment illustrated in FIG. 3, plane 301-1 can represent halfof the blocks on die 327-1, while plane 301-2 can represent the otherhalf. Plane 301-3 can represent half of the blocks on die 327-2, whileplane 301-4 can represent the other half In one or more embodiments,planes can be divided between odd and even numbered blocks. In one ormore embodiments, an “odd” or “even” block of data can be a logicalrepresentation of data where data units from half (the “odd” numbered)of the memory cells coupled to access lines associated with the blockare stored in an “odd” block and data units from the other half (the“even” numbered) of the memory cells coupled to access lines associatedwith the block are stored in an “even” block. Embodiments are notlimited to a particular plane representing half of the blocks on a givendie having more than one plane; other distributions of blocks betweenplanes are possible. Nor are embodiments are not limited to memorydevices with a particular number of blocks, planes, or dice.

FIG. 4 illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure. Thememory architecture shown in FIG. 4 includes register 430 and set/resetlatch 435. In one or more embodiments, register 430 and/or set/resetlatch 435 can be analogous to, for example, register 230 and/orset/reset latch 235 shown in FIG. 2A.

As shown in FIG. 4, register 430 can include a number of individualregisters 430-1, 430-2, 430-3, . . . , 430-N, and set/reset latch 435can include a number of individual set/reset latches 435-1, 435-2,435-3, . . . , 435-N. In one or more embodiments, each individualregister can be coupled to a different latch. For example, as shown inFIG. 4, individual register 430-1 is coupled to individual set/resetlatch 435-1, individual register 430-2 is coupled to individualset/reset latch 435-2, individual register 430-3 is coupled toindividual set/reset latch 435-3, and individual register 430-N iscoupled to individual set/reset latch 435-N.

In one or more embodiments, each individual register 430-1, 430-2,430-3, . . . , 430-N can include data associated with a memory cell,e.g., current and/or voltage values corresponding to the state of amemory cell, in a page of memory cells, e.g., page 225-0, 225-1, . . . ,225-N shown in FIG. 2A. The data in each individual register can beobtained by a sensing operation, as described herein. In one or moreembodiments, each individual latch 435-1, 435-2, 435-3, . . . , 435-Ncan include a known value, e.g., a known voltage and/or current valuecorresponding to an erased, e.g., 1, and/or programmed, e.g., 0, state.

In one or more embodiments, register 430 can be configured to determinea state, e.g., erased and/or non-erased, of each memory cell in a pageof memory cells, e.g., page 225-0, 225-1, . . . , 225-N, by comparingtile data in each individual register 430-1, 430-2, 430-3, . . . , 430-Nwith the known value in the individual latch 435-1, 435-2, 435-3, . . ., 435-N to which each individual register is coupled. For example,register 430 can be configured to determine a state of each memory cellin a page of memory cells by comparing the data in individual register430-1 with the known value in individual latch 435-1, comparing the datain individual register 430-2 with the known value in individual latch435-2, comparing the data in individual register 430-3 with the knownvalue in individual latch 435-3, and comparing the data in individualregister 430-N with the known value in individual latch 435-N.

In one or more embodiments, the determined state of each memory cell canbe used to determine the status of the page, as described herein. Forexample, if each memory cell is determined to be in an erased state, thepage can be determined to have a status of erased. In one or moreembodiments, if at least one of the memory cells is determined to be ina non-erased state, the page can be determined to have a status ofnon-erased. In one or more embodiments, if more than a substantialmajority of the memory cells are determined to be in an erased state,the page can be determined to have a status of erased. In one or moreembodiments, if more than a substantial minority of the memory cells aredetermined to be in one or more non-erased states, the page can bedetermined to have a status of non-erased.

FIG. 5A illustrates logic circuitry 500 for determining a status of apage of memory cells, e.g., page 225-0, 225-1, . . . , 225-N shown inFIG. 2A, in accordance with one or more embodiments of the presentdisclosure. In one or more embodiments, circuitry 500 can be associatedwith register 230 shown in FIG. 2A, as described herein.

As shown in FIG. 5A, logic circuitry 500 includes AND logic gate 550.AND logic gate 550 includes inputs 552-1, 552-2, 552-3, . . . , 552-Nand output 554. In one or more embodiments, inputs 552-1, 552-2, 552-3,. . . , 552-N can represent data associated with a state of a memorycell in a page of memory cells, e.g., page 225-0, 225-1, . . ., 225-N.For example, input 552-1 can represent data associated with a state of afirst memory cell in the page, input 552-2 can represent data associatedwith a state of a second memory cell in the page, input 552-3 canrepresent data associated with a state of a third memory cell in thepage, and input 552-N can represent data associated with a state of anNth memory cell in the page.

In one or more embodiments, AND logic gate 550 can determine a status ofa page of memory cells whose states(s) are represented by inputs 552-1,552-2, 552-3, . . . , 552-N by performing an AND logic operation on theinputs. For example, AND logic gate 550 can determine if the status ofthe page is erased or non-erased by performing the AND logic operationon the inputs. The AND logic operation can determine the status of thepage by determining whether or not a state of a number of the memorycells in the page is a particular state. For example, the AND logicoperation can determine the status of the page by determining whether ornot the state of the number of the memory cells in the page is an erasedstate. If AND logic gate 550 determines that the state of each of thenumber of memory cells is erased, AND logic gate 550 can determine thatthe status of the page is erased. Alternatively, if AND logic gate 550determines that the state of each of the number of memory cells is noterased, AND logic gate 550 can determine that the status of the page isnon-erased.

In one or more embodiments, AND logic gate 550 can determine whether astatus of a page of memory cells whose state(s) are represented byinputs 552-1, 552-2, 552-3, . . . , 552-N is a particular status byperforming an AND logic operation on the inputs. For example, AND logicgate 550 can determine whether or not the status of the page of memorycells is an erased status by performing the AND logic operation on theinputs. If each of the number of inputs represent an erased state, ANDlogic gate 550 can determine that the status of the page is erased byperforming the AND logic operation on the inputs. Alternatively, if oneor more of the number of inputs represent a non-erased state, AND logicgate 550 can determine that the status of the page is not an erasedstatus by performing the AND logic operation on the inputs.

In one or more embodiments, output 554 can represent the status, e.g.,erased or non-erased, determined by AND logic gate 550. In one or moreembodiments, output 554 can represent the determination by AND logicgate 550 of whether the status is a particular status. For example,output 554 can represent the determination by AND logic gate 550 ofwhether or not the status is an erased status. In one or moreembodiments, output 554 can be output from register 230, e.g., to I/Ocircuitry, as described herein.

FIG. 5B illustrates logic circuitry 501 for determining a status of apage of memory cells, e.g., page 225-0, 225-1, . . . , 225-N shown inFIG. 2A, in accordance with one or more embodiments of the presentdisclosure. In one or more embodiments, circuitry 501 can be associatedwith register 230 shown in FIG. 2A, as described herein.

As shown in FIG. 5B, logic circuitry 501 includes OR logic gate 555. ORlogic gate 555 includes inputs 557-1, 557-2, 557-3, . . . , 557-N andoutput 559. In one or more embodiments, inputs 557-1, 557-2, 557-3, . .. , 557-N can be analogous to inputs 552-1, 552-2, 552-3, . . . , 552-Nshown in FIG. 5A.

In one or more embodiments, OR logic gate 555 can determine a status ofa page of memory cells whose state(s) are represented by inputs 557-1,557-2, 557-3, . . . , 557-N by performing an OR logic operation on theinputs. For example, OR logic gate 555 can determine if the status ofthe page is erased or non-erased by performing the OR logic operation onthe inputs. The OR logic operation can determine the status of the pageby determining whether or not a state of at least one of the one or morememory cells in the page is a particular state. For example, the ORlogic operation can determine the status of the page by determiningwhether or not the state of at least one of the one or more memory cellsin the page is a non-erased state. If OR logic gate 555 determines thatthe state of at least one of the one or more memory cells is non-erased,OR logic gate 555 can determine that the status of the page isnon-erased. Alternatively, if OR logic gate 555 determines that thestate of none of the one or more memory cells is non-erased, OR logicgate 555 can determine that the status of the page is erased.

In one or more embodiments, OR logic gate 555 can determine whether astatus of a page of memory cells whose state(s) are represented byinputs 557-1, 557-2, 557-3, . . . , 557-N is a particular status byperforming an OR logic operation on the inputs. For example, OR logicgate 555 can determine whether or not the status of the page of memorycells is a non-erased status by performing the OR logic operation on theinputs. If at least one of the number of inputs represent a non-erasedstate, OR logic gate 555 can determine that the status of the page isnon-erased by performing the OR logic operation on the inputs.Alternatively, if none of the number of inputs represent a non-erasedstate, OR logic gate can determine that the status of the page is not anon-erased status by performing the OR logic operation on the inputs.

In one or more embodiments, output 559 can represent the status, e.g.,erased or non-erased, determined by OR logic gate 555. In one or moreembodiments, output 559 can represent the determination by OR logic gate555 of whether the status is a particular status. For example, output559 can represent the determination by OR logic gate 555 of whether ornot the status is a non-erased status. In one or more embodiments,output 559 can be output from register 230, e.g., to I/O circuitry, asdescribed herein.

FIG. 6 illustrates a timing diagram 600 of various signals duringoperation of a memory device in accordance with one or more embodimentsof the present disclosure. Timing diagram 600 includes command latchenable (CLE) signal 661, chip enable (CE#) signal 662, write enable(WE#) signal 663, address latch enable (ALE) signal 664, ready/busy(R/B#) signal 665, read enable (RE#) signal 666, and input/output (I/Ox)signal 667. The “#” symbol after a signal indicates that the signal isasserted LOW.

WE# signal 663 is responsible for clocking data, address, and/orcommands into the memory device. REY signal 666 enables the output databuffers, and is responsible for outputting data. When CLE signal 661 isHIGH, commands are latched into a command register on the rising edge ofthe WE# signal 663. When ALE signal 664 is high, addresses are latchedinto an address register on the rising edge of the WE# signal 663. IfCE# signal 662 is not asserted, the memory device remains in standbymode and does not respond to any control signals. If the memory deviceis busy with an erase, program, and/or sense operation, R/B# signal 665is asserted LOW. For example, during a sense operation, R/B# signal 665is low from 678 to 679, e.g., for time t_(R), as shown in FIG. 6.

Control circuitry, e.g., control circuitry 770 shown in FIG. 7, caninitiate memory device operations, e.g., erase, program, and/or senseoperations, by issuing a command cycle, such as CMD 671. As shown inFIG. 6, CMD 671 is issued by placing the command on I/Ox signal 667,driving CLE signal 661 HIGH and CE# signal 662 LOW, and issuing a WE#663 signal clock. Commands, addresses, and/or data can be clocked intothe memory device on the rising edge of WE# signal 663. For example, ina program operation, the data to be programmed can be clocked into aregister, e.g., register 230 shown in FIG. 2A, on the rising edge of WE#signal 663. As shown in FIG. 6, a command can include a number ofaddress cycles, e.g., address cycles 672, and/or a second command cycle,e.g., CMD 673.

As shown in FIG. 6, a status command, e.g., STATUS command 674, can beissued on I/Ox signal 667. STATUS command 674 can initiate a sequence todetermine a status of a page of memory cells in accordance with one ormore embodiments described herein. For example, STATUS command caninitiate a sequence that includes determining a status of a page ofmemory cells without outputting a sensed state of the memory cells inthe page to input/output (I/O) circuitry in response to the statuscommand. STATUS command 674 can also initiate a sequence to determinewhether or not a status of a page of memory cells is a particularstatus, in accordance with one or more embodiments described herein. Forexample, STATUS command 674 can initiate a sequence that includesprogramming a threshold setting, sensing a state of a number of memorycells in a page of memory cells, determining a number of times aparticular state is sensed, and determining whether a status of the pageis a particular status by determining whether the number of times theparticular state is sensed meets the threshold setting withoutoutputting the sensed state of the number of memory cells from aregister coupled to the page and in communication with I/O circuitry inaccordance with one or more embodiments of the present disclosure. Asshown in FIG. 6, STATUS command 674 can be issued subsequent to a senseoperation, e.g., subsequent to t_(R). However, embodiments of thepresent disclosure are not so limited.

FIG. 7 is a functional block diagram of an electronic memory system 700having at least one memory device 720 operated in accordance with one ormore embodiments of the present disclosure. Memory system 700 includes aprocessor 710 coupled to a non-volatile memory device 720 that includesa memory array 730 of non-volatile cells, e.g., memory array 100 ofnon-volatile cells 111-1, . . . , 111-N shown in FIG. 1. The memorysystem 700 can include separate integrated circuits or both theprocessor 710 and the memory device 720 can be on the same integratedcircuit. The processor 710 can be a microprocessor or some other type ofcontrolling circuitry such as an application-specific integrated circuit(ASIC).

The memory device 720 includes an array of non-volatile memory cells730, which can be floating gate flash memory cells with a NANDarchitecture, as described herein. The control gates of memory cells ofa “row” are coupled with a word line, while the drain regions of thememory cells of a “column” are coupled to bit lines, as describedherein. The source regions of the memory cells are coupled to sourcelines, as described herein. As will be appreciated by those of ordinaryskill in the art, the manner of connection of the memory cells to thebit lines and source lines depends on whether the array is a NANDarchitecture, a NOR architecture, an AND architecture, or some othermemory array architecture.

The embodiment of FIG. 7 includes address circuitry 740 to latch addresssignals provided over I/O connections 762 through I/O circuitry 760.Address signals are received and decoded by a row decoder 744 and acolumn decoder 746 to access the memory array 730. In light of thepresent disclosure, it will be appreciated by those skilled in the artthat the number of address input connections depends on the density andarchitecture of the memory array 730 and that the number of addressesincreases with both increased numbers of memory cells and increasednumbers of memory blocks and arrays.

The memory device 720 senses data in the memory array 730 by sensingvoltage and/or current changes in the memory array columns usingsense/buffer circuitry that in this embodiment can be read/latchcircuitry 750. The read/latch circuitry 750 can read and latch a page,e.g., a row, of data from the memory array 730. I/O circuitry 760 isincluded for bi-directional data communication over the T/O connections762 with the processor 710. Write circuitry 755 is included to writedata to the memory array 730.

Control circuitry 770 decodes signals provided by control connections772 from the processor 710. These signals can include chip signals,write enable signals, and address latch signals that are used to controlthe operations on the memory array 730, including data sensing, datawrite, and data erase operations, as described herein. In one or moreembodiments, the control circuitry 770 is responsible for executinginstructions from the processor 710 to perform the operations accordingto embodiments of the present disclosure. The control circuitry 770 canbe a state machine, a sequencer, or some other type of controller. Itwill be appreciated by those skilled in the art that additionalcircuitry and control signals can be provided, and that the memorydevice detail of FIG. 7 has been reduced to facilitate ease ofillustration.

FIG. 8 is a functional block diagram of a memory module 800 having atleast one memory device operated in accordance with one or moreembodiments of the present disclosure. Memory module 800 is illustratedas a memory card, although the concepts discussed with reference tomemory module 800 are applicable to other types of removable or portablememory (e.g., USB flash drives and/or solid-state drives) and areintended to be within the scope of “memory module” as used herein. Inaddition, although one example form factor is depicted in FIG. 8, theseconcepts are applicable to other form factors as well.

In one or more embodiments, memory module 800 will include a housing 805(as depicted) to enclose one or more memory devices 810, though such ahousing is not essential to all devices or device applications. At leastone memory device 810 includes an array of non-volatile multilevelmemory cells, e.g., array 100 of non-volatile memory cells 111-1, . . ., 111-N shown in FIG. 1. Where present, the housing 805 includes one ormore contacts 815 for communication with a host device. Examples of hostdevices include digital cameras, digital recording and playback devices,PDAs, personal computers, memory card readers, interface hubs and thelike. For one or more embodiments, the contacts 815 are in the form of astandardized interface. For example, with a USB flash drive, thecontacts 815 might be in the form of a USB Type-A male connector. Forone or more embodiments, the contacts 815 are in the form of asemi-proprietary interface, such as might be found on CompactFlash™memory cards licensed by SanDisk Corporation, Memory Stick™ memory cardslicensed by Sony Corporation, SD Secure Digital™ memory cards licensedby Toshiba Corporation and the like. In general, however, contacts 815provide an interface for passing control, address and/or data signalsbetween the memory module 800 and a host having compatible receptors forthe contacts 815.

The memory module 800 may optionally include additional circuitry 820,which may be one or more integrated circuits and/or discrete components.For one or more embodiments, the additional circuitry 820 may includecontrol circuitry, such as a memory controller, for controlling accessacross multiple memory devices 810 and/or for providing a translationlayer between an external host and a memory device 810. For example,there may not be a one-to-one correspondence between the number ofcontacts 815 and a number of connections to the one or more memorydevices 810. Thus, a memory controller could selectively couple an I/Oconnection (not shown in FIG. 8) of a memory device 810 to receive theappropriate signal at the appropriate I/O connection at the appropriatetime or to provide the appropriate signal at the appropriate contact 815at the appropriate time. Similarly, the communication protocol between ahost and the memory module 800 may be different than what is used foraccess of a memory device 810. A memory controller could then translatethe command sequences received from a host into the appropriate commandsequences to achieve the desired access to the memory device 810. Suchtranslation may further include changes in signal voltage levels inaddition to command sequences.

The additional circuitry 820 may further include functionality unrealtedto control of a memory device 810 such as logic functions as might beperformed by an ASIC. Also, the additional circuitry 820 may includecircuitry to restrict read or write access to the memory module 800,such as password protection, biometrics or the like. The additionalcircuitry 820 may include circuitry to indicate a status of the memorymodule 800. For example, the additional circuitry 820 may includefunctionality to determine whether power is being supplied to the memorymodule 800 and whether the memory module 800 is currently beingaccessed, and to display an indication of its status, such as a solidlight while powered and a flashing light while being accessed. Theadditional circuitry 820 may further include passive devices, such asdecoupling capacitors to help regulate power requirements within thememory module 800.

Conclusion

The present disclosure includes methods, devices, modules, and systemsfor operating semiconductor memory. One method embodiment includesdetermining a status of a page of memory cells without usinginput/output (I/O) circuitry, and outputting the status through the I/Ocircuitry.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofone or more embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1. A method for operating a memory device, comprising, determining astatus of a page of memory cells without using input/output (I/O)circuitry; and outputting the status through the I/O circuitry.
 2. Themethod of claim 1, wherein determining a status of a page of memorycells includes determining whether a state of a number of memory cellsin the page is an erased state by inputting a representation of a stateof each of the number of memory cells into an AND logic gate.
 3. Themethod of claim 1, wherein determining a status of a page of memorycells includes determining whether a state of at least one memory cellin the page is a non-erased state by inputting a representation of astate of a number of memory cells in the page into an OR logic gate. 4.The method of claim 1, wherein determining a status of a page of memorycells includes using circuitry located in a register coupled to thepage.
 5. The method of claim 4, wherein outputting the status throughthe I/O circuitry includes outputting the status from the register tothe I/O circuitry.
 6. A method for operating a memory device,comprising: sensing a state of a number of memory cells in a page ofmemory cells; determining a number of times a particular state issensed; and determining a status of the page by determining whether thenumber of times the particular state is sensed meets a threshold settingwithout outputting the sensed state of the number of memory cells toinput/output (I/O) circuitry.
 7. The method of claim 6, whereindetermining a status of the page includes determining the status of thepage using circuitry located in a register coupled to the page.
 8. Themethod of claim 7, including outputting the status of the page from theregister.
 9. The method of claim 7, wherein the sensed state of thenumber of memory cells is not output from the register.
 10. The methodof claim 6, wherein determining a number of times a particular state issensed includes determining a number of times an erased state is sensed.11. The method of claim 1O, wherein determining whether the number oftimes an erased state is sensed meets a threshold setting includesdetermining whether the number of times an erased state is sensed meetsa number equal to a substantial majority of the number of memory cells.12. The method of claim 6, wherein determining a number of times aparticular state is sensed includes determining a number of times anon-erased state is sensed.
 13. The method of claim 12, whereindetermining whether the number of times a non-erased state is sensedmeets a threshold setting includes determining whether the number oftimes a non-erased state is sensed meets a number equal to a substantialminority of the number of memory cells.
 14. A memory device, comprising;a page of memory cells; and a register coupled to the page, wherein theregister includes logic circuitry configured to: receive a number ofinputs, wherein each input represents a state of a memory cell in thepage; and determine whether a status of the page is a particular statusbased on the number of inputs.
 15. The device of claim 14, wherein: thelogic circuitry includes an AND logic gate; the number of inputs arecoupled to the AND logic gate; and the particular status is an erasedstatus.
 16. The device of claim 14, wherein: the logic circuitryincludes an OR logic gate; the number of inputs are coupled to the ORlogic gate; and the particular status is a non-erased status.
 17. Thedevice of claim 14, wherein: the device includes a number of latches,wherein one or more of the latches includes a known value; the registerincludes a number of individual registers, wherein: each of theindividual registers is coupled to one of the number of latches, whereineach individual register is coupled to a different latch; and eachindividual register includes data associated with a memory cell in thepage, wherein the data is obtained by a sensing operation; and theregister is configured to compare the data in each individual registerwith the known value in the latch to which each individual register iscoupled to determine the state of each memory cell.
 18. A memory device,comprising: a page of memory cells; input/output (I/O) circuitry; aregister coupled to the page and in communication with the I/Ocircuitry; and control circuitry configured to issue a command thatinitiates a sequence including: programming a threshold setting; sensinga state of a number of memory cells in the page; determining a number oftimes a particular state is sensed; and determining whether a status ofthe page is a particular status by determining whether the number oftimes the particular state is sensed meets the threshold setting withoutoutputting the sensed state of the number of memory cells from theregister to the I/O circuitry.
 19. The device of claim 18, wherein: theparticular state is an erased state; the particular status is an erasedstatus; and the threshold setting is a number equal to a substantialmajority of the number of memory cells in the page.
 20. The device ofclaim 18, wherein: the particular state is a non-erased state; theparticular status is a non-erased status; and the threshold setting is anumber equal to a substantial minority of the number of memory cells inthe page.
 21. A method for operating a memory device, comprising:initiating a programming operation of one or more pages of memory cells;and determining a status of the one or more pages of memory cellswithout outputting a sensed state of the memory cells in the one or morepages to input/output (I/O) circuitry.
 22. The method of claim 21,including determining whether the one or more pages are to be programmedduring the programming operation based on the status of the one or morepages.
 23. The method of claim 21, wherein determining a status of theone or more pages includes determining the status of the one or morepages subsequent to an interruption in the programming operation. 24.The method of claim 23, including determining on which page theprogramming operation is to resume based on the status of the one ormore pages.
 25. A method for operating a memory device, comprising:issuing a status command; and initiating a sequence to determine astatus of a page of memory cells without outputting a sensed state ofthe memory cells in the page to input/output (I/O) circuitry in responseto the status command.
 26. The method of claim 25, wherein the sequenceincludes inputting the sensed state of the memory cells into circuitrylocated in a register coupled to the page.
 27. The method of claim 28,including determining the sensed state of the memory cells prior toissuing the status command.